Philips BUK451-100A/B PowerMOS Transistor Preliminary Specification

BUK451-100A/B is an N-channel enhancement mode field-effect power transistor in a plastic envelope, produced by Philips Semiconductors. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.


Philips BUK451-100A/B PowerMOS Transistor Preliminary Specification - cover page
Brand
Philips
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
7
File format
PDF
File size
47 KB
Published
06 July, 2012
Updated
30 September, 2023
MD5 checksum
BCE10D7E27C821C1F832D5DC65887851

About this manual

This document is a preliminary specification for the Philips BUK451-100A/B PowerMOS transistor, an N-channel enhancement mode field-effect power transistor. The device is designed for use in switched mode power supplies, motor control, welding, and general purpose switching applications. It is housed in a plastic envelope with a TO220AB pin configuration.

What's inside

  • General Description
  • Quick Reference Data
  • Limiting Values
  • Thermal Resistances
  • Static Characteristics
  • Dynamic Characteristics
  • Reverse Diode Characteristics
  • Mechanical Data
  • Definitions

Specifications

Drain-source voltage100 V
Drain current (DC)3.0 A
Total power dissipation40 W
Junction temperature175 °C
Package typeTO220AB

Frequently asked questions

What is the maximum junction temperature?

The maximum junction temperature is 175 °C.

What is the maximum drain current at 25°C?

The maximum drain current (DC) at 25°C is 3.0 A.

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