BUK436W-1000B is a N-channel enhancement mode field-effect power transistor produced by Philips Semiconductors. The package is SOT429 (TO247), the working voltage is 1000V, the maximum current is 3.1A, and the maximum power consumption is 125W.
This document is a product specification datasheet for the Philips BUK436W-1000B, an N-channel enhancement mode field-effect power transistor. The device is designed for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and general purpose switching applications. It is packaged in a plastic SOT429 (T0247) envelope.
| Drain-source voltage | 1000 V |
|---|---|
| Drain current (DC) | 3.1 A |
| Total power dissipation | 125 W |
| Package type | SOT429 (T0247) |
The maximum total power dissipation is 125 W when the junction temperature is 25°C.
The maximum drain-source voltage rating is 1000 V.