BUK444-60H is a N-channel enhancement mode field-effect power transistor produced by Philips Semiconductors. The package is a plastic full-pack. The device is intended for use in automotive applications, switched mode power supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.
This document is a product specification datasheet for the Philips BUK444-60H, an N-channel enhancement mode field-effect power transistor. The device is designed in a plastic full-pack envelope (SOT186) and is intended for use in automotive applications, switched-mode power supplies, motor control, welding, and general-purpose switching.
| Drain-source voltage | 60 V |
|---|---|
| Drain current (DC) | 21 A |
| Total power dissipation | 30 W |
| Junction temperature | 150 °C |
| Drain-source on-state resistance | 38 mQ |
The maximum total power dissipation is 30 W at a junction temperature of 25 °C.
The maximum drain-source voltage is 60 V.
The maximum continuous reverse drain current is 21 A.