BUK445-200A/B is a power N-channel enhancement mode field-effect transistor suitable for applications such as switched mode power supplies, motor control, welding, DC/DC and AC/DC converters.
This document is a product specification sheet for the Philips BUK445-200A/B PowerMOS transistor. It describes an N-channel enhancement-mode field-effect device designed for use in switched mode power supplies (SMPS), motor control, welding, and general-purpose switching applications.
The datasheet provides comprehensive electrical characteristics including static parameters such as drain-source breakdown voltage, gate threshold voltage, and on-state resistance. It also covers dynamic characteristics like turn-on/turn-off times and capacitance values, along with thermal resistances and isolation limits.
| Drain-source voltage (Vos) | 200 V |
|---|---|
| Drain current (DC) Ip | 7.6 A / 7 A |
| Total power dissipation Prot | 30 W |
| Junction temperature Tj | 150 °C |
| Package type | SOT186 |
The maximum junction temperature rating is 150 °C.
The maximum total power dissipation is 30 W.
The maximum drain-source voltage is 200 V.