BUK446-800A/B is an N-channel enhancement mode power MOS transistor designed for applications such as switched mode power supplies, motor control, welding, DC/DC and AC/DC converters. It features a drain-source voltage of 800V, a drain current of 2.0A, a total power dissipation of 30W, and a drain-source on-state resistance of 3-4Ω.
This document is a product specification for the Philips BUK446-800A/B PowerMOS transistor. The device is an N-channel enhancement mode field-effect power transistor housed in a plastic full-pack SOT186 envelope. It is intended for use in switched mode power supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and general purpose switching applications.
| Package type | SOT186 |
|---|
The maximum total power dissipation is 30 W when the case temperature is 25°C.
The maximum drain-source voltage rating is 800 V.
The device can be stored between -55°C and 150°C.