BUK452-100A/B is a N-channel enhancement mode field-effect power transistor in a plastic envelope. It is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.
This document is a product specification datasheet for the Philips BUK452-100A/B PowerMOS transistor. The device is an N-channel enhancement mode field-effect power transistor housed in a plastic TO220AB envelope, designed for use in switched mode power supplies (SMPS), motor control, welding, and DC/DC or AC/DC converters.
| Drain-source voltage (Vos) | 100 V |
|---|---|
| Drain current (DC) - BUK452-100A | 11 A |
| Drain current (DC) - BUK452-100B | 10 A |
| Total power dissipation (Prot) | 60 W |
| Junction temperature (Tj) | 175 °C |
| Package type | TO220AB |
The maximum total power dissipation is 60 W when the junction temperature is 25°C.
The maximum drain-source voltage is 100 V.
The maximum junction temperature is 175°C.