Philips BUK446-1000B PowerMOS Transistor Datasheet

BUK446-1000B is an N-channel enhancement mode power field-effect transistor suitable for switched mode power supplies, motor control, welding, DC/DC and AC/DC converters, and general-purpose switching applications. It has a drain-source voltage of 1000V, a drain current of 1.5A, and an on-state resistance of 5Ω.


Philips BUK446-1000B PowerMOS Transistor Datasheet - cover page
Brand
Philips
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
7
File format
PDF
File size
65 KB
Published
06 July, 2012
Updated
28 September, 2023
MD5 checksum
0F27A06AFEC70423A0659182D81F140A

About this manual

This document is a product specification for the Philips BUK446-1000B, an N-channel enhancement mode field-effect power transistor housed in a plastic full-pack envelope. The device is designed for use in switched mode power supplies, motor control, welding, and general purpose switching applications.

What's inside

  • General Description
  • Limiting Values
  • Static Characteristics
  • Dynamic Characteristics
  • Reverse Diode Characteristics
  • Mechanical Data
  • Definitions

Frequently asked questions

What is the maximum total power dissipation of this transistor?

The device has a maximum total power dissipation rating of 30 W when the case temperature is 25 °C.

What is the maximum continuous drain current at a case temperature of 100 °C?

The maximum continuous drain current drops to 1.0 A when the case temperature reaches 100 °C.

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