PBSS5320X is a PNP low VCEsat (BISS) transistor produced by Philips Semiconductors. It has a SOT89 (SC-62) package, low collector-emitter saturation voltage VCEsat, high collector current capability: IC and ICM, higher efficiency leading to less heat generation, and reduced printed-circuit board requirements. Applications include power management, DC/DC converters, supply line switching, battery charger, LCD backlighting, etc.
The document is a product specification datasheet for the Philips PBSS5320X, a PNP low VCEsat (BISS) transistor. It is housed in a SOT89 (SC-62) plastic package and is designed for applications requiring high collector current capability and low saturation voltage, such as DC/DC converters, supply line switching, and battery charging. The device features a collector pad for efficient heat transfer.
| Collector-Emitter Voltage (VCEO) | -20 V |
|---|---|
| Collector Current (DC) (IC) | -3 A |
| Peak Collector Current (ICM) | -5 A |
| Equivalent On-Resistance (Rcesat) | 105 mΩ |
| Package Type | SOT89 (SC-62) |
| Thermal Resistance Junction-to-Ambient (RthJA) | 80 K/W |
The NPN complement is the PBSS4320X.
Typical applications include power management, DC/DC converters, supply line switching, battery chargers, and LCD backlighting.
The maximum junction temperature (Tj) is 150 °C.