PBSS8110T is a 100V, 1A NPN low VCEsat (BISS) transistor from Philips Semiconductors. It features SOT23 package, low collector-emitter saturation voltage VCEsat, high collector current capability, higher efficiency and less heat generation. It is suitable for automotive 42V power, telecom infrastructure, industrial, power management, DC/DC converters, supply line switching, battery charger, LCD backlighting and other applications.
The document describes the Philips PBSS8110T, which is an NPN low Vcesat (BISS) transistor housed in a plastic SOT23 surface-mounted package. It features high collector current capability and reduced printed-circuit board requirements due to its low saturation voltage.
| Collector-emitter voltage (VCEO) | 100 V |
|---|---|
| Collector current (DC) (IC) | 1 A |
| Repetitive peak collector current (ICM) | 3 A |
| Equivalent on-resistance (RCEsat) | 165 mΩ to 200 mΩ |
| Package type | SOT23 |
The maximum collector-emitter voltage (VCEO) is 100 V.
It is used in automotive power, telecom infrastructure, industrial DC/DC converters, battery chargers, and LCD backlighting.