PBSS9110T is a 100V, 1A PNP low VCEsat (BISS) transistor from Philips Semiconductors. This transistor features a SOT23 package, low collector-emitter saturation voltage VCEsat, high collector current capability (IC and ICM), and higher efficiency leading to less heat generation. Major application segments include automotive 42V power, telecom infrastructure, and industrial. This transistor can also be used for DC-DC conversion, peripheral drivers, and low supply voltage applications (e.g. lamps and LEDs) and inductive load drivers (e.g. relays, buzzers, and motors).
The document is a product specification for the Philips PBSS9110T, a PNP low VCEsat transistor designed for automotive, telecom, and industrial applications. It features a SOT23 plastic package and is intended for use in DC-to-DC conversion and peripheral drivers such as lamps, LEDs, relays, buzzers, and motors.
The datasheet details the device's electrical characteristics, including limiting values, thermal characteristics, and typical performance curves. It specifies parameters such as collector-emitter voltage, collector current, current gain, and saturation voltage under various conditions.
| Collector-Emitter Voltage (VCEO) | -100 V |
|---|---|
| Collector Current (DC) (IC) | -1 A |
| Package Type | SOT23 |
| Junction Temperature (Tj) | 150 °C |
| Operating Ambient Temperature (Tamb) | -65 to +150 °C |
The NPN complement is the PBSS8110T.
The major application segments are Automotive 42 V power, Telecom infrastructure, and Industrial.
The maximum total power dissipation is 480 mW when mounted on a printed-circuit board with a 1 cm² collector mounting pad.