PBSS5540Z is a PNP low Vcesat transistor in a SOT223 plastic package. It features high current, low voltage and low Vcesat, making it suitable for battery powered equipment in automotive, telecom, and audio/video applications such as motor and lamp drivers.
This document is a preliminary specification sheet for the Philips PBSS5540Z, a PNP medium power transistor housed in an SOT223 plastic package. The device features a maximum collector current of 10 A and a low collector-emitter saturation voltage (Vcesat), making it suitable for heavy-duty battery-powered equipment such as automotive motor drivers, telecom systems, and audio/video applications.
| Collector current (DC) | 5 A |
|---|---|
| Peak collector current | 10 A |
| Collector-base voltage (open emitter) | -40 V |
| Total power dissipation | 1.35 W |
| Junction temperature (max) | 150 °C |
| Thermal resistance (junction to ambient) | 92 K/W |
The NPN complement for the PBSS5540Z is the PBSS4540Z.
The device uses an SOT223 plastic surface mounted package.