The PBSS5350T is a 50V, 3A PNP low VCEsat (BISS) transistor from Philips Semiconductors. It features low heat generation, high current capability, high current gain and high efficiency.
The Philips PBSS5350T is a PNP low VCEsat transistor designed for power management applications. It features a high collector current capability and high current gain, making it suitable for low and medium power DC/DC converters, supply line switching, battery chargers, and linear voltage regulation with low voltage drop-out (LDO). The device is housed in a plastic surface-mounted SOT23 package with three leads.
Key electrical characteristics include a maximum collector-emitter voltage of 50V and a maximum repetitive peak collector current of 3A. The transistor offers a low equivalent on-resistance (Reesat) of 135 mΩ under specific conditions, contributing to improved efficiency by reducing heat generation. It operates within a storage temperature range of -65°C to +150°C.
| Collector-Emitter Voltage (VCEO) | -50 V |
|---|---|
| Equivalent On-Resistance (Reesat) | 135 mΩ |
| Package Type | SOT23 |
| Storage Temperature | -65 to +150 °C |
The NPN complement of the PBSS5350T is the PBSS4350T.
It is used in power management, DC/DC converters, supply line switching, battery chargers, and LDOs.