PBSS8110S is a 100V, 1A NPN low VCEsat (BISS) transistor. It features low collector-emitter saturation voltage and high collector current capability, leading to higher efficiency and less heat generation. It is suitable for automotive 42V power, telecom infrastructure, general industrial applications, and power management, such as DC/DC converters, supply line switching, battery charger, and LCD backlighting. It can also be used for peripheral drivers, such as generic drivers and inductive load drivers.
The Philips PBSS8110S is an NPN low VCEsat (BISS) transistor designed for applications requiring high collector current capability and low saturation voltage. It is housed in a plastic single-ended leaded (through hole) SOT54 package with three leads.
Key features include a maximum collector-emitter voltage of 100 V, a DC collector current of 1 A, and a peak collector current of 3 A. The device is suitable for automotive, telecom infrastructure, and general industrial applications, including power management, DC/DC converters, and peripheral drivers.
| Collector-Emitter Voltage (VCEO) | 100 V |
|---|---|
| Collector Current (DC) (IC) | 1 A |
| Peak Collector Current (ICM) | 3 A |
| Base Current (DC) (IB) | 300 mA |
| Total Power Dissipation (PTOT) | 830 mW |
| Junction Temperature (TJ) | 150 °C |
| Operating Ambient Temperature (Tamb) | -65 to +150 °C |
| Collector-Emitter Saturation Voltage (VCEsat) | 200 mV |
| Equivalent On-Resistance (RCEsat) | 200 mΩ |
| Package Type | SOT54 |
The maximum collector-emitter voltage (VCEO) is 100 V.
The maximum DC collector current (IC) is 1 A.
The peak collector current (ICM) is 3 A.
The maximum junction temperature (TJ) is 150 °C.