PBSS8110X is a low Vcesat NPN BISS transistor from Philips Semiconductors. It is packaged in a SOT89 (SC-62/TO-243) and has low collector-emitter saturation voltage Vcesat, high collector current capability IC and ICM, high efficiency and other features. It is mainly used in automotive 42V power, telecom infrastructure, industrial and other fields. It can also be used for drivers in low voltage applications (such as lamps and LEDs), inductive load drivers (such as relays, buzzers and motors) and DC-DC converters.
The Philips PBSS8110X is an NPN low Vcesat Breakthrough in Small Signal (BISS) transistor housed in a SOT89 (SC-62/TO-243) SMD plastic package. Its PNP complement is the PBSS9110X. Key features include a low collector-emitter saturation voltage, high collector current capability, and high efficiency leading to less heat generation.
Major application segments for this transistor include automotive 42 V power, telecom infrastructure, and industrial uses. It is also suitable for peripheral drivers, such as drivers in low supply voltage applications (e.g., lamps and LEDs), inductive load drivers (e.g., relays, buzzers, and motors), and DC-to-DC converters.
| Collector-emitter voltage (open base) | 100 V |
|---|---|
| Collector current (DC) | 1 A |
| Peak collector current (single pulse) | 3 A |
| Transition frequency | 100 MHz |
The PNP complement is the PBSS9110X.
It is available in a SOT89 (SC-62/TO-243) SMD plastic package.
Major applications include automotive 42 V power, telecom infrastructure, and industrial uses.
Yes, it is suitable for inductive load drivers such as relays, buzzers, and motors.