Philips PBSS5350X 50V 3A PNP Low VCEsat Transistor Datasheet

This is a technical manual for PBSS5350X, which introduces its features and applications

Brand: Philips
Category: Other Electronics
Document type: Datasheet
Language: English
Pages: 11
File format: PDF
File size: 104 KB
Published: 03 July, 2012
Updated: 30 September, 2023
MD5 checksum: D7A0EA1F9E9BFE2B49EBFCFD5204FA12
PDF: Philips PBSS5350X 50V 3A PNP Low VCEsat Transistor Datasheet PDF

About this manual

The document is a product specification datasheet for the Philips PBSS5350X, a PNP low VCEsat (BISS) transistor. It is housed in a SOT89 (SC-62) plastic package and is designed for applications requiring high collector current capability and low saturation voltage, such as power management, DC/DC converters, and inductive load driving.

What's inside

Features
Applications
Pinning
Description
Marking
Ordering Information
Limiting Values
Thermal Characteristics
Characteristics
Data Sheet Status

Specifications

Collector-Emitter Voltage (VCEO)	-50 V
Collector Current (DC)	-3 A
Peak Collector Current	-5 A
Junction Temperature	150 °C

Frequently asked questions

What is the NPN complement of the PBSS5350X?

The NPN complement of the PBSS5350X is the PBSS4350X.

What is the maximum collector current for this transistor?

The maximum DC collector current is 3 A.

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter voltage is 50 V.

What is the maximum junction temperature?

The maximum junction temperature is 150 °C.

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