PBSS5350D is a PNP low VCEsat transistor produced by Philips Semiconductors. It has high current capability and low VCEsat. This product is mainly used in applications that require high current and low VCEsat, such as automotive, telecommunications and audio/video equipment, as well as the latest low voltage IC applications.
This document is a product specification datasheet for the Philips PBSS5350D, a PNP transistor designed with high current capabilities and low collector-emitter saturation voltage ($V_{CESAT}$). It is intended for use in heavy-duty battery-powered equipment such as automotive motor drivers, telecom systems, and audio/video applications where saving battery power is critical. The device is housed in an SC-74 plastic package (SOT457) with six leads.
| Collector-emitter voltage (open base) | -50 V |
|---|---|
| Emitter-base voltage (open collector) | -6 V |
| Total power dissipation (Tamb < 25 °C, 1 cm² pad) | 600 mW |
| Storage temperature range | -65 to +150 °C |
| Junction temperature max | 150 °C |
The device comes in a SC-74 plastic package with six leads.
Yes, the NPN complement for this device is the PBSS4350D.