Philips PBSS5350S 50 V Low VCEsat PNP Transistor Data Sheet

PBSS5350S is a 50V low Vcesat PNP transistor with high power dissipation (830mW), ultra low collector-emitter saturation voltage, 3A continuous current, high current switching, as well as improved device reliability due to reduced heat generation.


Philips PBSS5350S 50 V Low VCEsat PNP Transistor Data Sheet - cover page
Brand
Philips
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
8
File format
PDF
File size
69 KB
Published
03 July, 2012
Updated
30 September, 2023
MD5 checksum
C4CF9A1B3518BBC0B85934EBF14A628C

About this manual

This document is a product specification datasheet for the Philips PBSS5350S, a PNP low VCEsat transistor packaged in SOT54 plastic. It is designed for high power dissipation (830 mW) and features an ultra-low collector-emitter saturation voltage, making it suitable for high current switching applications.

What's inside

  • Features
  • Applications
  • Pinning
  • Limiting Values
  • Thermal Characteristics
  • Characteristics
  • Package Outline
  • Data Sheet Status

Specifications

Collector-emitter voltage50 V
Collector current (DC)3 A
Total power dissipation830 mW
Package typeSOT54
Thermal resistance junction-to-ambient150 K/W

Frequently asked questions

What is the NPN complement of the PBSS5350S?

The NPN complement is the PBSS43508.

What are the typical applications for this transistor?

It is used in medium power switching, linear regulators, DC/DC convertors, and battery management applications.

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