philips PBSS8110D 100 V 1 A NPN low VCEsat (BISS) transistor handbook

The PBSS8110D is a 100 V, 1 A NPN low VCEsat transistor in a plastic SOT457 (SC-74) package.


philips PBSS8110D 100 V 1 A NPN low VCEsat (BISS) transistor handbook - cover page
Brand
Philips
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
12
File format
PDF
File size
84 KB
Published
03 July, 2012
Updated
30 September, 2023
MD5 checksum
52B45023A62EDFB50F86BCE081B266A9

About this manual

The document describes the Philips PBSS8110D, which is an NPN low Vcesat transistor housed in a plastic SOT457 (SC-74) package. Key features include high collector current capability and efficiency that leads to less heat generation.

Major application segments identified for this device are automotive 42 V power systems, telecom infrastructure, and industrial uses. Specific applications include DC-to-DC converters, peripheral drivers, drivers in low supply voltage applications such as lamps and LEDs, and inductive load drivers like relays, buzzers, and motors.

What's inside

  • Product profile
  • Pinning information
  • Ordering information
  • Limiting values
  • Thermal characteristics
  • Characteristics

Specifications

Package typeSOT457

Frequently asked questions

What is the maximum continuous collector current for this transistor?

The device supports a continuous collector current of up to 1 A.

What are the operating ambient temperature limits?

This transistor operates in an ambient temperature range from -65 °C to +150 °C.

How much power can this device dissipate at 25°C?

The total power dissipation is rated at a maximum of 300 mW when the ambient temperature is 25°C.

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