The PBSS8110Z 100V, 1A NPN low VCEsat (BISS) transistor is a low VCEsat transistor with a SOT223 (SC-73) package. It features a SOT223 package, low collector-emitter saturation voltage VCEsat, high collector current capability IC and ICM, high efficiency, and is mainly used in automotive 42V power, telecom infrastructure, industrial, DC-to-DC converter, peripheral driver, low supply voltage applications (e.g. lamps and LEDs), and inductive load drivers (e.g. relays, buzzers and motors).
The document describes the Philips PBSS8110Z, which is an NPN low collector-emitter saturation voltage (Vcesat) transistor housed in a plastic SOT223 (SC-73) package. Key features include high collector current capability and high efficiency leading to less heat generation.
| Collector-emitter voltage (Vceo) | 100 V |
|---|---|
| Collector current (DC) (Ic) | 1 A |
| Peak collector current (Icm) | 3 A |
| Equivalent on-resistance (Reesat) | 200 mQ |
| Package type | SOT223 (SC-73) |
The maximum collector-emitter voltage is 100 V.
The maximum total power dissipation is 650 mW.