PBSS5320T is a 20V, 3A PNP low VCEsat (BISS) transistor with low heat generation, high efficiency, high current, etc. It is suitable for power management, low and medium power DC/DC converters, supply line switching, battery chargers and linear voltage regulation with low voltage drop-out (LDO).
The document describes the Philips PBSS5320T, a discrete semiconductor component designed as a PNP low VCEsat (BISS) transistor. It is housed in a plastic surface-mounted SOT23 package with three leads and features a low equivalent on-resistance of 105 mΩ at specific operating conditions.
The datasheet details the device's electrical characteristics, including limiting values for voltage and current, thermal resistance under various mounting conditions, and typical performance curves for collector-emitter saturation voltage and base-emitter turn-on voltage across different temperatures.
| Collector-Emitter Voltage (VCEO) | -20 V |
|---|---|
| Collector Current (DC) (IC) | 3 A |
| Equivalent On-Resistance (Reesat) | 105 mΩ |
| Package Type | SOT23 |
| Total Power Dissipation (Tamb = 25°C) | 300 mW |
| Junction Temperature (Tj) | -150°C |
The NPN complement for the PBSS5320T is the PBSS4320T.
The device supports a DC collector current of up to 3 A.