This document is a datasheet for PBSS5250X, a 50V, 2A PNP low VCEsat (BISS) transistor. The transistor features low collector-emitter saturation voltage VCEsat, high collector current capability, higher efficiency leading to less heat generation, and reduced printed-circuit board requirements. It is suitable for power management and peripheral driver applications.
This document is a datasheet for the Philips PBSS5250X, a PNP low VCEsat (BISS) transistor designed for high efficiency and reduced heat generation. The device is housed in a SOT89 (SC-62) plastic package and is intended for applications such as power management, DC/DC converters, supply line switching, battery chargers, and LCD backlighting.
Key electrical characteristics include a maximum collector-emitter voltage of 50V and a continuous collector current of 2A. The transistor features a low equivalent on-resistance of 160 mΩ at 2A, making it suitable for driving inductive loads like relays, buzzers, and motors, as well as lamps and LEDs in low supply voltage applications.
| Collector-Emitter Voltage (VCEO) | -50 V |
|---|---|
| Package Type | SOT89 (SC-62) |
| Junction Temperature (Tj) | 150 °C |
Applications include power management, DC/DC converters, supply line switching, battery chargers, and LCD backlighting.