This document describes the features and characteristics of the PBSS5250T 50V, 2A PNP low VCEsat (BISS) transistor, including low collector-emitter saturation voltage VCEsat, high collector current capability, higher efficiency leading to less heat generation, reduced printed-circuit board requirements, and cost-effective alternative to MOSFETs in specific applications. It is suitable for power management, peripheral drivers, and other applications.
The document describes the PBSS5250T, a discrete semiconductor component featuring ultra-low collector-emitter saturation voltage. It is designed as a cost-effective alternative to MOSFETs in specific applications such as DC/DC converters, supply line switching, battery chargers, and LCD backlighting.
Key features include high collector current capability (up to 2A continuous), reduced heat generation due to higher efficiency, and compatibility with small SOT23 plastic packages. The datasheet details electrical characteristics, limiting values, thermal resistance, and package dimensions.
| Collector-Emitter Voltage (VCEO) | -50 V |
|---|---|
| Collector Current (DC) (IC) | -2 A |
| Peak Collector Current (ICM) | -3 A |
| Equivalent On-Resistance (RCEsat) | 150 mΩ |
| Total Power Dissipation (PTOT) | 300 mW |
| Junction Temperature (Tj) | -150 °C |
| Operating Ambient Temperature (Tamb) | -65 to +150 °C |
It is used in power management, DC/DC converters, supply line switching, battery chargers, LCD backlighting, and as a driver for lamps, LEDs, relays, buzzers, and motors.
The device is available in a plastic surface mounted SOT23 package with 3 leads.