This document describes the features and characteristics of the PBSS5230T, a 30V, 2A PNP low VCEsat (BISS) transistor. It includes low collector-emitter saturation voltage VCEsat, high collector current capability, higher efficiency leading to less heat generation, reduced printed-circuit board requirements, and cost-effective alternative to MOSFETs in specific applications.
The document describes the Philips PBSS5230T, a PNP BISS transistor designed for low collector-emitter saturation voltage and high collector current capability. It is offered in a plastic SOT23 surface-mounted package and serves as a cost-effective alternative to MOSFETs in specific applications.
Key features include low heat generation due to higher efficiency and reduced printed-circuit board requirements. The device is suitable for power management tasks such as DC/DC converters, supply line switching, battery charging, and LCD backlighting, as well as for peripheral drivers like lamps, LEDs, relays, buzzers, and motors.
| Collector-Emitter Voltage | -30 V |
|---|---|
| Collector Current (DC) | -2 A |
| Peak Collector Current | -3 A |
| Equivalent On-Resistance | 220 mΩ |
| Package Type | SOT23 |
| Junction Temperature | 150 °C |
It is used in power management (DC/DC converters, supply line switching, battery charger, LCD backlighting) and as a peripheral driver for lamps, LEDs, relays, buzzers, and motors.
It is a PNP transistor.
The maximum collector-emitter voltage is -30 V.