PBSS5160DS is a 60V, 1A PNP low VCEsat (BISS) transistor with low collector-emitter saturation voltage VCEsat, high collector current capability, high collector current gain (hFE) and high efficiency.
The Philips PBSS5160DS is a PNP/PNP low Vcesat Breakthrough in Small Signal (BISS) transistor pair housed in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. It is designed for applications requiring dual low power switches, such as controlling motors and fans, as well as general automotive applications. The device features a high collector current capability and high collector current gain at high Ic, resulting in high efficiency and reduced heat generation compared to conventional transistors.
| Collector-emitter voltage (Vceo) | 60 V |
|---|---|
| Collector current (DC) | 1 A |
| Peak collector current (single pulse) | 2 A |
| Collector-emitter saturation voltage (Vcesat) | 250 mV to 330 mV |
| Package type | SC-74 |
| Junction temperature (Tj) | 150 °C |
| DC current gain (hfe) at Ic = -1A | 100 to 160 |
The NPN complement of the PBSS5160DS is the PBSS4160DS.
It is suitable for dual low power switches, such as motors and fans, and automotive applications.