Philips PBSS5140U 40 V low VCEsat PNP transistor Data Sheet

This document describes the features and characteristics of the PBSS5140U 40 V low VCEsat PNP transistor, including low collector-emitter saturation voltage, high current capability, reduced heat generation, and the PNP low VCEsat transistor in a SOT323 (SC-70) plastic package.


Philips PBSS5140U 40 V low VCEsat PNP transistor Data Sheet - cover page
Brand
Philips
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
12
File format
PDF
File size
65 KB
Published
03 July, 2012
Updated
29 September, 2023
MD5 checksum
68DAEBACC3A78DDDFB5160BFE1F76C0A

About this manual

The document describes the Philips PBSS5140U, a discrete semiconductor component designed as a general-purpose switching and muting device. It features a low collector-emitter saturation voltage (VCEsat) and is housed in a plastic surface-mounted SOT323 (SC-70) package with three leads.

Key characteristics include a maximum collector-emitter voltage of -40 V, a peak collector current capability of 2 A, and an equivalent on-resistance less than 500 mΩ. The device is suitable for applications such as LCD backlighting, supply line switching circuits, and battery-driven equipment like mobile phones and video cameras.

What's inside

  • Features
  • Applications
  • Description
  • Limiting Values
  • Thermal Characteristics
  • Characteristics
  • Package Outline

Specifications

Collector-emitter voltage (VCEO)-40 V
Equivalent on-resistance (RCEsat)< 500 mΩ

Frequently asked questions

What is the maximum collector-emitter voltage rating for this transistor?

The maximum collector-emitter voltage is 40 V.

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