Philips PBSS4140S NPN Transistor Data Sheet

pbss4140s is a low vcesat npn transistor launched by philips, which has the characteristics of high power dissipation, ultra low collector-emitter saturation voltage, 1a continuous current, high current switching, etc., and is widely used in medium power switching and muting, linear regulators, dc/dc converters, lcd backlighting, supply line switching circuits and other fields.


Philips PBSS4140S NPN Transistor Data Sheet - cover page
Brand
Philips
Category
Transistor
Document type
Datasheet
Language
English
Pages
8
File format
PDF
File size
57 KB
Published
03 July, 2012
Updated
30 September, 2023
MD5 checksum
D014891133BF64358EBC5DF9BFA10032

About this manual

This document is a product specification datasheet for the Philips PBSS4140S, an NPN transistor designed with ultra-low collector-emitter saturation voltage. It is housed in a plastic single-ended leaded SOT54 package and features high power dissipation of 830 mW.

What's inside

  • Features
  • Applications
  • Quick Reference Data
  • Limiting Values
  • Thermal Characteristics
  • Characteristics

Specifications

Collector-emitter voltage (VCEO)40 V
Collector current (DC) (IC)1 A
Peak collector current (ICM)2 A
Equivalent on-resistance (Rcesat)<500 mΩ
Power dissipation (PD)830 mW

Frequently asked questions

What is the maximum collector current for DC operation?

The device supports a continuous collector current of up to 1 A.

How much power can this transistor dissipate at room temperature?

It has a total power dissipation rating of 830 mW when the ambient temperature is below 25 °C.

What are the maximum voltage ratings for the collector-base and collector-emitter junctions?

The collector-base voltage is rated at a maximum of 40 V, and the collector-emitter voltage is also rated at 40 V.

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