This document describes the features and characteristics of the PBSS3540M, a 40V, 0.5A PNP low VCEsat (BISS) transistor. It includes low collector-emitter saturation voltage, high collector current capability, high efficiency, and reduced printed-circuit board requirements. It is suitable for power management and peripheral driver applications.
The Philips PBSS3540M is a discrete semiconductor component designed as a PNP transistor with low collector-emitter saturation voltage (VCEsat). It is housed in a leadless ultra-small plastic SOT883 package featuring three solder lands. The device is optimized for high efficiency and reduced heat generation, making it suitable for applications requiring low voltage drops.
| Collector-Emitter Voltage (VCEO) | -40 V |
|---|---|
| Operating Ambient Temperature | -65 to +150 °C |
The maximum collector-emitter voltage (VCEO) is -40 V.
Yes, reflow soldering is the only recommended soldering method.