PBSS4130T is a 30V, 1A NPN low VCEsat (BISS) transistor, featuring low collector-emitter saturation voltage VCEsat, high collector current capability IC and ICM, high efficiency, low heat generation, reduced printed-circuit board requirements and a cost effective alternative to MOSFETs in specific applications.
The document describes the Philips PBSS4130T, an NPN BISS transistor designed for power management and peripheral driver applications. Key features include low collector-emitter saturation voltage, high collector current capability, and suitability as a cost-effective alternative to MOSFETs in specific applications such as DC/DC conversion, supply line switching, and driving inductive loads like relays and motors.
The datasheet details the device's electrical characteristics, including limiting values for voltage and current, thermal resistance, and DC current gain. It also provides package outline dimensions for the SOT23 plastic surface-mounted package and includes ordering information.
| Collector-Emitter Voltage (VCEO) | 30 V |
|---|---|
| Collector Current (DC) (IC) | 1 A |
| Peak Collector Current (ICM) | 3 A |
| Equivalent On-Resistance (Rcesat) | 220 mΩ |
| Package Type | SOT23 |
The transistor is used in power management (DC/DC conversion, supply line switching, battery charging, LCD backlighting) and as a peripheral driver for lamps, LEDs, relays, buzzers, and motors.
Yes, it is described as a cost-effective alternative to MOSFETs in specific applications.
The maximum operating ambient temperature is +150 °C.