philips PBSS4350SA 50 V low VCEsat NPN transistor handbook

This document describes the features and characteristics of the PBSS4350SA low VCEsat NPN transistor, including low collector-emitter saturation voltage VCEsat and corresponding equivalent resistance RCEsat, high collector current capability IC and ICM, high collector current gain hFE, and less heat generation leading to higher efficiency. This transistor is suitable for low and medium power DC/DC converters, low voltage regulation (LDO), MOSFET drivers, supply line switching, and battery chargers.

---