This document describes the features and characteristics of the PBSS4350SA low VCEsat NPN transistor, including low collector-emitter saturation voltage VCEsat and corresponding equivalent resistance RCEsat, high collector current capability IC and ICM, high collector current gain hFE, and less heat generation leading to higher efficiency. This transistor is suitable for low and medium power DC/DC converters, low voltage regulation (LDO), MOSFET drivers, supply line switching, and battery chargers.
This document is an objective specification datasheet for the Philips PBSS4350SA, an NPN low Vcesat transistor designed in a plastic SOT54 package. The device features high collector current capability and low heat generation, making it suitable for applications such as DC/DC converters, LDOs, MOSFET drivers, supply line switching, and battery chargers.
The datasheet provides comprehensive electrical characteristics including limiting values, thermal resistance data, and typical performance curves for parameters like collector-emitter saturation voltage (Vcesat), current gain (hFE), and transition frequency. It also includes package outline dimensions and pin descriptions.
| Collector-emitter voltage (VCEO) | 50 V |
|---|---|
| Collector current (DC) (IC) | 2 A |
| Equivalent on-resistance (Rcesat) | 130 mΩ |
The maximum DC collector current is 2 A.
The maximum collector-emitter voltage is 50 V.