This datasheet introduces the features of PBSS4140DPN low Vcesat NPN/PNP transistor, including 600 mW total power dissipation, low collector-emitter saturation voltage, high current capability, etc.
The Philips PBSS4140DPN is a discrete semiconductor device consisting of an NPN/PNP low VCEsat transistor pair in an SC-74 (SOT457) plastic package. It is designed to replace two SOT23 packaged transistors on the same PCB area, reducing pick and place costs and required board space. The device features high current capability with a peak collector current of 2 A and improved reliability due to reduced heat generation.
| Collector-Emitter Voltage | 40 V |
|---|---|
| Peak Collector Current | 2 A |
| Equivalent On-Resistance | < 500 mΩ |
| Package Type | SC-74 (SOT457) |
The maximum collector-emitter voltage is 40 V.
The device supports a peak collector current of 2 A.
The equivalent on-resistance is less than 500 mΩ.