Philips Semiconductors PBSS4240DPN 40 V Low VCEsat NPN/PNP Transistor Product Specification

PBSS4240DPN is a low VCEsat NPN/PNP transistor produced by Philips Semiconductors. It has the characteristics of low collector-emitter saturation voltage, high collector current capability, high collector current gain, high efficiency and so on. It is widely used in power management and peripheral driver applications.


Philips Semiconductors PBSS4240DPN 40 V Low VCEsat NPN/PNP Transistor Product Specification - cover page
Brand
Philips
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
12
File format
PDF
File size
106 KB
Published
03 July, 2012
Updated
30 September, 2023
MD5 checksum
27CE1A21B41BD8EB1B7D7DAC78B3568D

About this manual

The document is a product specification datasheet for the Philips Semiconductors PBSS4240DPN. This device consists of an NPN/PNP low VCEsat transistor pair housed in a SOT457 (SC-74) plastic package.

Key features include high collector current capability, high current gain at high currents, and reduced heat generation due to efficiency. The transistors are designed for applications such as power management (MOSFET drivers, dual supply line switching) and peripheral driving (motor drivers).

What's inside

  • Features
  • Applications
  • Description
  • Quick Reference Data
  • Pinning
  • Limiting Values
  • Thermal Characteristics
  • Characteristics

Specifications

Collector Current (DC) (ICO)1.35 A / -1.1 A
Package TypeSOT457 (SC-74)
Download PDF (106 KB)

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