PBSS4120T is a 20V, 1A NPN low VCEsat (BISS) transistor. It features low collector-emitter saturation voltage VCEsat, high collector current capability IC and ICM, high efficiency leading to less heat generation, reduced printed-circuit board requirements, and is a cost-effective alternative to MOSFETs in specific applications. It is suitable for power management, peripheral driver, etc.
The document describes the Philips PBSS4120T, a discrete semiconductor component available in a SOT23 plastic package. It is characterized by ultra-low collector-emitter saturation voltage (Vcesat) and equivalent on-resistance parameters, making it suitable as a cost-effective alternative to MOSFETs for specific low-voltage applications.
| Collector-Emitter Voltage (VCEO) | 20 V |
|---|---|
| Collector Current (DC) (IC) | 1 A |
| Peak Collector Current (ICM) | 3 A |
| Equivalent On-Resistance (Rcesat) | 200 mΩ |
| Package Type | SOT23 |
It is used in power management, DC/DC conversion, supply line switching, battery chargers, LCD backlighting, and as a driver for lamps, LEDs, relays, buzzers, and motors.
The maximum collector-emitter voltage (VCEO) is 20 V.