Philips PBSS4160T NPN Low VCEsat Transistor Datasheet

This document describes the features and characteristics of the PBSS4160T, which is a 60V, 1A NPN low VCEsat (BISS) transistor.


Philips PBSS4160T NPN Low VCEsat Transistor Datasheet - cover page
Brand
Philips
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
10
File format
PDF
File size
100 KB
Published
03 July, 2012
Updated
29 September, 2023
MD5 checksum
6DD1C215201DAEDFF0918C0F95482219

About this manual

The Philips PBSS4160T is an NPN low VCEsat (BISS) transistor designed for high efficiency and reduced heat generation. It serves as a cost-effective replacement for medium power transistors like the BCP55 and BCX55. The device is available in a plastic surface-mounted SOT23 package with three leads.

What's inside

  • Features
  • Applications
  • Quick Reference Data
  • Pinning
  • Limiting Values
  • Thermal Characteristics
  • Characteristics
  • Package Outline

Specifications

Collector-emitter voltage60 V
Collector current (DC)1 A
Peak collector current2 A
Equivalent on-resistance250 mΩ
Package typeSOT23

Frequently asked questions

What is the PNP complement of the PBSS4160T?

The PNP complement is the PBSS5160T.

What are the major application segments for this transistor?

The major application segments are Automotive 42 V power, Telecom infrastructure, and Industrial.

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