This document is a product specification for PBSS4350S, a 50V low VCEsat NPN transistor. The transistor features high power dissipation, ultra low collector-emitter saturation voltage, 3A continuous current, and high current switching. It is suitable for medium power switching and muting, linear regulators, DC/DC converters, supply line switching circuits, battery management applications, strobe flash units, and heavy duty battery powered equipment.
This document is a product specification datasheet for the Philips PBSS4350S, an NPN low VCEsat transistor housed in a SOT54 plastic package. It is designed for high power dissipation (830 mW) and features an ultra-low collector-emitter saturation voltage, making it suitable for high current switching applications.
The datasheet provides quick reference data, pinning information, and detailed electrical characteristics including limiting values, thermal characteristics, and typical performance curves. It also outlines recommended applications such as medium power switching, linear regulators, DC/DC converters, and battery management systems.
| Collector-emitter voltage (VCEO) | 50 V |
|---|---|
| Collector current (DC) | 3 A |
| Peak collector current | 5 A |
| Equivalent on-resistance | <145 mΩ |
| Power dissipation | 830 mW |
| Package type | SOT54 |
| Collector-base voltage | 60 V |
| Emitter-base voltage | 6 V |
The maximum collector-emitter voltage is 50 V.
The device supports 3 A of continuous collector current.
The equivalent on-resistance is less than 145 mΩ.
It uses a SOT54 plastic package.