PBSS4230T is a 30 V, 2 A NPN low VCEsat (BISS) transistor, features low collector-emitter saturation voltage VCEsat, high collector current capability IC and ICM, high efficiency, reduced printed-circuit board requirements and cost effective alternative to MOSFETs in specific applications.
The document describes the PBSS4230T, an NPN BISS transistor designed for power management and peripheral driver applications. Key features include ultra-low collector-emitter saturation voltage (Vcesat) and equivalent on-resistance (Rcesat), making it a cost-effective alternative to MOSFETs in specific low-voltage scenarios.
The datasheet details the device's electrical characteristics, limiting values, thermal properties, and package dimensions. It specifies that the transistor is available in a plastic surface-mounted SOT23 package with three leads.
| Collector-Emitter Voltage (VCEO) | 30 V |
|---|---|
| Collector Current (DC) (IC) | 2 A |
| Peak Collector Current (ICM) | 3 A |
| Equivalent On-Resistance (Rcesat) | 200 mΩ |
| Package Type | SOT23 |
It is suitable for power management, DC/DC conversion, supply line switching, battery charging, LCD backlighting, and driving inductive loads like relays or motors.
The maximum collector-emitter voltage (VCEO) is 30 V.
Yes, the PNP complement for this device is the PBSS5230T.