Philips PBSS4240Y 40 V Low VCEsat NPN Transistor Datasheet

PBSS4240Y is a high-performance 40V low Vcesat NPN transistor. It features low collector-emitter saturation voltage, high current capability and enhanced performance. It is widely used in supply line switching circuits, battery management applications, DC/DC converter applications, strobe flash units and heavy duty battery powered equipment (motor and lamp drivers).


Philips PBSS4240Y 40 V Low VCEsat NPN Transistor Datasheet - cover page
Brand
Philips
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
8
File format
PDF
File size
49 KB
Published
03 July, 2012
Updated
30 September, 2023
MD5 checksum
1F2242B7477894A22D39424B6C3D5707

About this manual

This document is a product specification datasheet for the Philips PBSS4240Y, an NPN transistor designed with a low collector-emitter saturation voltage (VCEsat). The device is housed in a SOT363 (SC-88) plastic surface-mounted package and features six leads. It is intended for applications such as strobe flash units, supply line switching circuits, battery management, and DC/DC converters.

What's inside

  • Features
  • Applications
  • Quick Reference Data
  • Pinning
  • Limiting Values
  • Thermal Characteristics
  • Characteristics
  • Package Outline
  • Data Sheet Status
  • Disclaimers

Specifications

Collector-Emitter Voltage (VCEO)40 V
Peak Collector Current (ICM)3 A
Equivalent On-Resistance (Rcesat)<200 mΩ
Package TypeSOT363 (SC-88)
DC Current Gain (hFE) Min300
Collector-Emitter Saturation Voltage (VCEsat) Max240 mV

Frequently asked questions

What is the PNP complement of the PBSS4240Y?

The PNP complement is the PBSS5240Y.

What is the maximum storage temperature?

The storage temperature range is from -65 °C to +150 °C.

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