This document describes the features and characteristics of the PBSS4350T 50V low VCEsat NPN transistor, including low collector-emitter saturation voltage VCEsat and corresponding low equivalent on-resistance RCEsat, high collector current capability, high collector current gain, and improved efficiency due to reduced heat generation. The transistor is suitable for power management applications, low and medium power DC/DC converters, supply line switching, battery chargers, and linear voltage regulation with low voltage drop-out (LDO).
This document is a product specification datasheet for the Philips PBSS4350T, an NPN low VCEsat transistor designed for power management applications. The device features a low collector-emitter saturation voltage and high collector current capability, making it suitable for low and medium power DC/DC converters, supply line switching, battery chargers, and linear voltage regulation with low voltage drop-out (LDO). It is available in a SOT23 plastic package.
| Collector-emitter voltage | 50 V |
|---|---|
| Collector current (DC) | 2 A |
| Equivalent on-resistance | 130 mΩ |
| Package type | SOT23 |
It is used in power management applications, low and medium power DC/DC converters, supply line switching, battery chargers, and linear voltage regulation with low voltage drop-out.
The maximum collector-emitter voltage is 50 V.
The maximum DC collector current is 2 A.