This is a low Vcesat NPN transistor with the features of low power dissipation, small package, high current capability. The transistor is suitable for general purpose switching and muting, LCD backlighting, supply line switching circuits and battery driven equipment (such as mobile phones, video cameras and hand-held devices).
The document describes the Philips PBSS4140V, an NPN low VCEsat transistor designed with high current capabilities. It is housed in a very small 1.6 mm x 1.2 mm x 0.55 mm ultra thin SOT666 plastic package.
| Collector-Emitter Voltage (VCEO) | 40 V |
|---|---|
| Collector Current (DC) (IC) | 1 A |
| Peak Collector Current (ICM) | 2 A |
The maximum total power dissipation is 300 mW when the ambient temperature is below 25 °C.
The maximum collector-emitter saturation voltage is 190 mV when the collector current is 1 A.
The maximum operating ambient temperature is 150 °C.