PBSS2540M is a 40V, 0.5A low voltage saturation NPN transistor with low collector-emitter saturation voltage VCEsat, high collector current capability IC and ICM, high efficiency leading to reduced heat generation and reduced printed-circuit board requirements. It is suitable for power management and peripheral driver applications.
This document is a product specification datasheet for the Philips PBSS2540M, an NPN low Vcesat (BISS) transistor. The device is designed for applications requiring low saturation voltage and high efficiency, such as power management, DC-DC converters, and peripheral drivers like LED backlighting and inductive load control.
The datasheet provides comprehensive technical data including limiting values, thermal characteristics, and electrical characteristics. It details the device's performance under various conditions, such as collector current, temperature, and voltage, along with package dimensions for the SOT883 leadless ultra small plastic package.
| Collector-Emitter Voltage (VCEO) | 40 V |
|---|---|
| Collector Current (DC) (IC) | 500 mA |
| Peak Collector Current (ICM) | 1 A |
| Equivalent On-Resistance (RceEsat) | < 500 mΩ |
| Operating Ambient Temperature | -65 to +150 °C |
The PNP complement is the PBSS3540M.
Reflow soldering is the only recommended soldering method.