PBSS3515M is a 15 V, 0.5 A PNP low VCEsat (BISS) transistor produced by Philips Semiconductors
This document is a product specification datasheet for the Philips PBSS3515M, a discrete semiconductor component. It describes a PNP transistor designed with low collector-emitter saturation voltage (Vcesat) and features an ultra-small leadless plastic package (SOT883). The device is intended for applications requiring high efficiency and reduced heat generation.
| Collector-Emitter Voltage (VCEO) | -15 V |
|---|---|
| Collector Current (DC) (IC) | 500 mA |
| Peak Collector Current (ICM) | -1 A |
| Package Type | SOT883 |
| Operating Ambient Temperature (Tamb) | -65 to +150 °C |
The maximum DC collector current is 500 mA, while the peak collector current can reach 1 A.
The total power dissipation is 250 mW when the ambient temperature is below 25 °C.
The maximum collector-emitter voltage is 15 V under open base conditions.