This document describes the features and characteristics of the PBSS4140U, a 40V low VCEsat NPN transistor. It includes low collector-emitter saturation voltage, high current capabilities, reduced heat generation, and improved device reliability. The transistor is suitable for general purpose switching and muting, LCD backlighting, supply line switching circuits, and battery driven equipment (mobile phones, video cameras, and hand-held devices).
This document is a product specification datasheet for the Philips PBSS4140U, an NPN low VCEsat transistor designed for general-purpose switching and muting applications. It is housed in a SOT323 plastic package and is suitable for use in LCD backlighting, supply line switching circuits, and battery-driven equipment such as mobile phones and video cameras. The PNP complement is identified as the PBSS5140U.
| Collector-emitter voltage (VCEO) | 40 V |
|---|---|
| Peak collector current | 2 A |
| Equivalent on-resistance | < 500 mΩ |
| Package type | SOT323 |
| Collector current (DC) | 1 A |
| Peak base current | 1 A |
| Total power dissipation (Tamb < 25 °C) | 250 mW |
| Total power dissipation (Tamb = 25 °C) | 350 mW |
The PNP complement is the PBSS5140U.
The maximum collector-emitter voltage (VCEO) is 40 V.