Philips PBSS3540F 40 V Low VCEsat PNP Transistor Datasheet

PBSS3540F is a 40V low Vcesat PNP transistor that features low collector-emitter saturation voltage, high current capability, improved thermal behavior due to flat leads and enhanced performance over SOT23 general purpose transistors.


Philips PBSS3540F 40 V Low VCEsat PNP Transistor Datasheet - cover page
Brand
Philips
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
8
File format
PDF
File size
45 KB
Published
03 July, 2012
Updated
30 September, 2023
MD5 checksum
F85F7870B28C4B3871E7A123F8B25CEB

About this manual

The document describes the Philips PBSS3540F, a PNP transistor designed for high current capability and improved thermal behavior due to flat leads. It is packaged in an SC-89 (SOT490) plastic package and is suitable for general-purpose switching, muting, low-frequency driver circuits, and battery-driven equipment such as mobile phones and video cameras. The NPN complement for this device is the PBSS2540F.

What's inside

  • Features
  • Applications
  • Quick Reference Data
  • Pinning
  • Limiting Values
  • Thermal Characteristics
  • Characteristics
  • Package Outline
  • Data Sheet Status
  • Disclaimers

Specifications

Collector-emitter voltage-40 V
Equivalent on-resistance< 700 mΩ
Package typeSC-89 (SOT490)

Frequently asked questions

What is the NPN complement of the PBSS3540F?

The NPN complement is the PBSS2540F.

What are the typical applications for this transistor?

It is used for general purpose switching, muting, low frequency driver circuits, and battery driven equipment.

What is the maximum collector-emitter voltage?

The maximum collector-emitter voltage (Vceo) is -40 V.

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