This document describes the features and characteristics of the PBSS3515VS 15V low VCEsat PNP double transistor, including 300 mW total power dissipation, ultra-thin package, low collector-emitter saturation voltage, high current capability, etc.
The Philips PBSS3515VS is a PNP low VCEsat double transistor designed for general purpose switching and muting applications. It features a very small 1.6 x 1.2 mm ultra thin SOT666 package and is intended to replace two SC75/SC89 packaged low VCEsat transistors on the same PCB area to reduce pick and place costs. The device is suitable for low frequency driver circuits, LCD backlighting, and battery-driven equipment such as mobile phones and video cameras.
| Total power dissipation | 300 mW |
|---|---|
| Package type | SOT666 |
| Collector-emitter voltage | -15 V |
| Peak collector current | -1 A |
| Equivalent on-resistance | <500 mΩ |
| Collector current (DC) | 500 mA |
| Operating ambient temperature | -65 to +150 °C |
The NPN complement is the PBSS2515VS.
The only recommended soldering method is reflow soldering.