This document describes the features and characteristics of the PBSS2540F, a 40V low VCEsat NPN transistor. It includes low collector-emitter saturation voltage, high current capability, improved thermal behavior due to flat leads, and enhanced performance over SOT23 general purpose transistors. Applications include general purpose switching and muting, low frequency driver circuits, audio frequency general purpose amplifier applications, and battery driven equipment (mobile phones, video cameras, hand-held devices).
The document is a product specification datasheet for the Philips PBSS2540F, an NPN low Vcesat transistor housed in a SC-89 (SOT490) plastic package. It is designed for general-purpose switching, muting, low-frequency driver circuits, and audio frequency amplifier applications, particularly in battery-driven equipment like mobile phones and video cameras.
The datasheet includes quick reference data, pinning details, limiting values, thermal characteristics, and electrical characteristics such as DC current gain and saturation voltages. It also features typical performance graphs and a package outline with dimensions.
| Collector-emitter voltage (VcEo) | 40 V |
|---|---|
| Collector current (DC) (lo) | 500 mA |
| Peak collector current (lom) | 1 A |
| Equivalent on-resistance (Reesat) | <500 mΩ |
| Package type | SC-89 (SOT490) |
| Total power dissipation (Prot) | 250 mW |
| Transition frequency (fr) | 250 - 450 MHz |
It is used for general purpose switching and muting, low frequency driver circuits, audio frequency general purpose amplifier applications, and battery driven equipment.
The maximum collector-emitter voltage (VcEo) is 40 V.
The maximum DC collector current (lo) is 500 mA.