The PBSS2515YPN is a 15V low VCEsat NPN/PNP transistor. It features low collector-emitter saturation voltage, high current capability, replaces two SC-70 packaged low VCEsat transistors on the same PCB area, reduces required PCB area, and reduces pick and place costs.
This document is a product specification datasheet for the Philips PBSS2515YPN, a discrete semiconductor component. It describes a 15 V low Vcesat NPN/PNP transistor pair housed in an SC-88 plastic package. The device is designed for general-purpose switching, muting, low-frequency driver circuits, and LCD backlighting applications, particularly in battery-driven equipment like mobile phones and cameras.
The datasheet provides comprehensive electrical characteristics, including limiting values, thermal characteristics, and typical performance curves for both the NPN and PNP transistors within the pair. Key parameters such as collector-emitter voltage, peak collector current, and equivalent on-resistance are detailed, along with application notes suggesting its use in supply line switching and replacing two SC-70 packaged transistors to reduce PCB area.
| Collector-emitter voltage (VCEO) | 15 V |
|---|---|
| Peak collector current (ICM) | 1 A |
| Equivalent on-resistance (Rcesat) | <500 mΩ |
| Package type | SC-88 plastic |
| Total power dissipation (Tamb < 25 °C) | 300 mW |
| Operating ambient temperature | -65 to +150 °C |
It is used for general purpose switching and muting, low frequency driver circuits, and LCD backlighting.
Yes, it replaces two SC-70 packaged low Vcesat transistors.
The peak collector current is 1 A.