PBSS2515VPN is a low Vcesat NPN/PNP dual transistor produced by PHILIPS, with a feature of low power consumption (300mW), small package (1.6x1.2mm), and can be used in switching, driving, backlighting, audio amplification and other occasions.
This document is a product specification datasheet for the Philips PBSS2515VPN, which consists of an NPN/PNP low Vcesat transistor pair. The device is housed in a very small 1.6 x 1.2 mm ultra thin SOT666 plastic package and features excellent coplanarity due to straight leads.
The datasheet provides detailed electrical characteristics, including limiting values for voltage and current, thermal resistance data, and typical performance graphs for DC current gain, saturation voltages, and on-resistance across various temperatures.
| Collector-emitter voltage (VcEo) | 15 V |
|---|---|
| Peak collector current | 1 A |
| Equivalent on-resistance (Reesat) | <500 mΩ |
| Total power dissipation (Per transistor) | 300 mW |
| Package type | SOT666 plastic package |
The maximum collector-emitter voltage (VcEo) is 15 V.
It is suitable for general purpose switching, muting, low frequency driver circuits, LCD backlighting, and audio frequency amplifier applications.
The device uses a very small 1.6 x 1.2 mm ultra thin package.