PBSS2515M is a 15V, 0.5A NPN low VCEsat (BISS) transistor with low collector-emitter saturation voltage VCEsat, high collector current capability IC and ICM, high efficiency, reduced heat generation and reduced printed-circuit board requirements. Suitable for power management, peripheral driver and other applications.
This document is a product specification datasheet for the Philips PBSS2515M, an NPN low Vcesat (BISS) transistor. The device is designed for applications requiring low collector-emitter saturation voltage and high efficiency, such as power management in DC-DC converters, battery chargers, and LCD backlighting, as well as driving inductive loads like relays and motors.
The datasheet provides comprehensive technical data including quick reference parameters, limiting values, thermal characteristics, and electrical characteristics. It details the device's performance under various conditions, such as collector current, temperature, and voltage, and includes package outline dimensions for the SOT883 leadless ultra-small plastic package.
| Collector-Emitter Voltage (VCEO) | 15 V |
|---|---|
| Collector Current (DC) (IC) | 500 mA |
| Peak Collector Current (ICM) | 1 A |
| Package Type | SOT883 |
| Operating Ambient Temperature | -65 to +150 °C |
The maximum collector-emitter voltage (VCEO) is 15 V.
The maximum DC collector current (IC) is 500 mA.