This document describes the features and applications of the PBSS2515F 15V low VCEsat NPN transistor.
This document is a datasheet for the Philips PBSS2515F, which is described as a 15 V low collector-emitter saturation voltage (Vcesat) NPN transistor. The device features high current capabilities and improved thermal behavior due to its flat leads.
The transistor is designed for general-purpose switching and muting applications, including low-frequency driver circuits, LCD backlighting, and audio frequency amplifier use in battery-driven equipment such as mobile phones and video cameras.
| Collector-emitter voltage (VcEo) | 15 V |
|---|---|
| Collector current (DC) (Ico) | 500 mA |
| Peak collector current (lom) | 1 A |
| Equivalent on-resistance (Reesat) | <500 mΩ |
| Package type | SC-89 (SOT490) |
The maximum collector-emitter voltage is 15 V.
The maximum total power dissipation is 250 mW.
The storage temperature ranges from -65 to +150 °C.