PBSS2515VS is a low VCEsat NPN double transistor produced by PHILIPS. It has 300mW total power dissipation, 1.6x1.2mm ultra thin package, excellent coplanarity, low collector-emitter saturation voltage, high current capability, improved thermal performance and flat lead.
This document is a product specification datasheet for the Philips PBSS2515VS, an NPN low Vce(sat) double transistor housed in a SOT666 plastic package. The device is designed for general-purpose switching, muting, and low-frequency driver circuits, including LCD backlighting and battery-driven equipment.
| Collector-Emitter Voltage | 15 V |
|---|---|
| Peak Collector Current | 1 A |
| Equivalent On-Resistance | <500 mΩ |
| Total Power Dissipation | 300 mW |
| Package Type | SOT666 |
| Operating Ambient Temperature | -65 to +150 °C |
The PNP complement is the PBSS3515VS.
It is used for general purpose switching, muting, low frequency driver circuits, LCD backlighting, and battery driven equipment.