The PMEG3002AEB is a low VF MEGA Schottky barrier diode from Philips Semiconductors. It features very low forward voltage and an ultra small SMD package. The diode is suitable for ultra high-speed switching, high efficiency DC/DC conversion, voltage clamping, reverse polarity protection, low voltage rectification and low power consumption applications.
This document is a product specification data sheet for the Philips PMEG3002AEB, a Low VF MEGA Schottky barrier diode. The device features an integrated guard ring for stress protection and is encapsulated in an ultra-small SMD plastic package (SOD523; SC-79). It is designed for applications requiring ultra-high-speed switching, voltage clamping, inverse-polarity protection, and low-voltage rectification.
| Forward current (continuous) | 0.2 A |
|---|---|
| Reverse voltage | 30 V |
| Storage temperature range | -65 to +150 °C |
The device has a maximum continuous reverse voltage of 30 V.
The diode supports a continuous forward current up to 200 mA.
This product can operate in an ambient temperature range of -65 to +125 °C.